Radiation damage in Si photodiodes by high-temperature irradiation
β Scribed by H. Ohyama; E. Simoen; C. Claeys; K. Takakura; H. Matsuoka; T. Jono; J. Uemura; T. Kishikawa
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 116 KB
- Volume
- 16
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
Results of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the performance degradation of InGaAs photodiodes are presented. The macroscopic device performance will be correlated with the radiation-induced defects observed by deep level transient spectroscopy. It was
Results are presented of a study of radiation damage by high-temperature electron irradiation in submicron MOS FETs with standard thermal oxide and nitrogen annealed gate oxide as gate dielectric material. n-Channel 15 2 MOS FETs were irradiated by 2-MeV electrons for the fluence of 1 3 10 e / cm a