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Radiation damage in electron-irradiated strained Si n-MOSFETs

โœ Scribed by K. Takakura; H. Ohyama; K. Hayama; Y. Aoki; G. Eneman; P. Verheyen; E. Simoen; R. Loo; C. Claeys

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
416 KB
Volume
9
Category
Article
ISSN
1369-8001

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๐Ÿ“œ SIMILAR VOLUMES

Considerations for evaluating hot-electr
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Results are presented of a study of radiation damage by high-temperature electron irradiation in submicron MOS FETs with standard thermal oxide and nitrogen annealed gate oxide as gate dielectric material. n-Channel 15 2 MOS FETs were irradiated by 2-MeV electrons for the fluence of 1 3 10 e / cm a