Damage-free reactive ion etching of sili
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M. Konuma; F. Banhart; F. Phillipp; E. Bauser
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Article
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1989
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Elsevier Science
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English
β 352 KB
Reactiw" ion etching (RIE) of silicon in a nitrogen trifluoride (Nk~) plasma is studied at temperatures between + 20 and -140 Β°~\ 7he etch rates decrease with decreasing temperature and follow an Arrhenius-type dependence below -70 Β°C Cross-sectional transmission electron microscopy gives" evidence