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Radiation damage in silicon dioxide films exposed to reactive ion etching


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
158 KB
Volume
30
Category
Article
ISSN
0042-207X

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Damage-free reactive ion etching of sili
✍ M. Konuma; F. Banhart; F. Phillipp; E. Bauser πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 352 KB

Reactiw" ion etching (RIE) of silicon in a nitrogen trifluoride (Nk~) plasma is studied at temperatures between + 20 and -140 Β°~\ 7he etch rates decrease with decreasing temperature and follow an Arrhenius-type dependence below -70 Β°C Cross-sectional transmission electron microscopy gives" evidence