Quasi-TEM analysis of broadside-coupled V-shaped microshield coplanar waveguides

✍ Scribed by Ceyhun Karpuz; Mehmet Duyar; Adnan Görür

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 150 KB
• Volume: 26
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/1098-2760(20000820)26:4<229::aid-mop7>3.0.co;2-r

✦ Synopsis

film thickness, and the power reflectances for both p-and s-polarizations. By comparing the results in both tables, two materials can be selected as substrates for the APBS, which are gallium arsenide GaAs and gallium antimonide GaSb. The different parameters of the APBS are listed in Table . Referring back to Figure 1, s s 85Њ, N s N s 0 p 0 s 2 p 2 s 2.273 y j4.084, d s 57.019 nm, and d s 46.126 nm for p s GaAs. On the other hand, s s 85Њ, N s N s 0 p 0 s 2 p 2 s 2.522 y j4.13, d s 70.993 nm, and d s 53.638 nm for GaSb. p s

These two devices are to be operated in the UV range at s 248.1 and 295.35 nm, respectively.

6. CONCLUSION

Single-layer coating reflective APBS for a UV light is presented. The APBS consists of an absorbing substrate coated with a single-layer thin film. Two materials are selected as the substrate for the APBS, which are gallium arsenide GaAs and gallium antimonide GaSb. The APBS power reflectances for the p-and s-polarizations are found to be 87.23 and 97.14%, respectively, for GaAs. On the other hand, power reflectances for the p-and s-polarization were equal to 86.69 and 96.91%, respectively, for GaSb.