Quasi-analytical study of the energy levels in double quantum wells
✍ Scribed by M. Camargo; R.M. Gutiérrez
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 233 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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📜 SIMILAR VOLUMES
We have calculated the exciton binding energy in an Al x Ga 1-x As/GaAs double quantum well by a variational envelope function procedure using a simple two-band model. The influence of the shift of the AlAs separating barrier, introducing an asymmetry into the system, on the value of the exciton bin
We calculated the exciton binding energy and energy levels in GaAs=Al0:3Ga0:7As DQWs with non-abrupt interfaces, taking into account the electric and magnetic ÿeld e ects. Numerical results for GaAs=Al0:3Ga0:7As double quantum wells show an enhancement of the e-hh exciton energy by as much as 50 meV