## Abstract In the mesoscopic regime, the MOS device performance is affected by gateβinduced quantization effects leading to a loss of transconductance and threshold voltage shift and gate leakage tunnelling currents degrading the overall device performance. We discuss the expected impact of quantu
Quantum transport, quantum effects and circuit functionality of nanostructured electronic circuits
β Scribed by W. Mathis; F. Felgenhauer; S. Fabel
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 199 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0098-9886
- DOI
- 10.1002/cta.288
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