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Quantum transport phenomena in InAs/GaSb/InAs tunneling devices under high magnetic fields

โœ Scribed by T. Takamasu; N. Miura; K. Taira; K. Funato; H. Kawai

Book ID
118364997
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
319 KB
Volume
263
Category
Article
ISSN
0039-6028

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Effect of strong magnetic fields on curr
Effect of strong magnetic fields on current-voltage characteristics of InAs/GaSb/InAs tunneling devices
โœ T. Takamasu; N. Miura; K. Taira; K. Funato; H. Kawai ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 236 KB

Measurements of current-voltage characteristics of GaSb/InAs heterostructure devices were performed under pulsed high magnetic fields up to 40 T. The critical voltage for the negative differential conductivity was found to change under strong magnetic fields applied parallel to the interface. The de

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Current vs voltage characteristics of InAs/GaSb/InAs diodes were studied in two samples with a different width of GaSb layers under pulsed high magnetic fields up to 40 T. A current peak of negative differential conductivity was found to decrease with increasing magnetic fields. Moreover, more than