Effect of strong magnetic fields on current-voltage characteristics of InAs/GaSb/InAs tunneling devices

✍ Scribed by T. Takamasu; N. Miura; K. Taira; K. Funato; H. Kawai

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 236 KB
• Volume: 201
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)91119-3

✦ Synopsis

Measurements of current-voltage characteristics of GaSb/InAs heterostructure devices were performed under pulsed high magnetic fields up to 40 T. The critical voltage for the negative differential conductivity was found to change under strong magnetic fields applied parallel to the interface. The dependence of critical voltage on the magnetic field was investigated in terms of self-consistently calculated Landau levels.