The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin
Quantum Noise Properties of Vertical Cavity Surface Emitting Lasers: Theory and Experiment
✍ Scribed by J.-L. Vey; K. Auen; W. Elsässer
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 251 KB
- Volume
- 206
- Category
- Article
- ISSN
- 0370-1972
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