Growth and Structural Characterization of InGaN Vertical Cavity Surface Emitting Lasers Operating at Room Temperature

✍ Scribed by Someya, T. ;Werner, R. ;Forchel, A. ;Arakawa, Y.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 119 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<63::aid-pssa63>3.0.co;2-8

✦ Synopsis

We have successfully fabricated post-type InGaN VCSEL structures and observed their room temperature oscillation at 399 nm under optical excitation. The nitride structures were grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) was employed to characterize nitride Bragg reflectors. Lasing action was unambiguously confirmed by significant narrowing in emission spectra from 0.8 to less than 0.1 nm (resolution limit).