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Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature

✍ Scribed by I.L. Krestnikov; W.V. Lundin; A.V. Sakharov; V.A. Semenov; A.S. Usikov; A.F. Tsatsulnikov; Zh.I. Alferov; N.N. Ledentsov; A. Hoffmann; D. Bimberg

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 146 KB
Volume: 216
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(199911)216:1<511::aid-pssb511>3.0.co;2-7

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We have successfully fabricated post-type InGaN VCSEL structures and observed their room temperature oscillation at 399 nm under optical excitation. The nitride structures were grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) was employed to chara