๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Quantum mechanical effects in nanometer field effect transistors

โœ Scribed by Luo, Jun-Wei; Li, Shu-Shen; Xia, Jian-Bai; Wang, Lin-Wang


Book ID
121842710
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
535 KB
Volume
90
Category
Article
ISSN
0003-6951

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๐Ÿ“œ SIMILAR VOLUMES


InAs quantum dot field effect transistor
โœ G. Yusa; H. Sakaki ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 46 KB

We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, singl

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