Simulation of nanometer-scale semiconduc
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Eiichi Sano
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Article
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2004
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John Wiley and Sons
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English
β 662 KB
It is necessary to take quantum effects into account in the design of nanometerscale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage