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Quantum-mechanical effects in nanometer scale MuGFETs

✍ Scribed by Se Re Na Yun; Chong Gun Yu; Jong Tae Park; Jean Pierre Colinge


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
761 KB
Volume
85
Category
Article
ISSN
0167-9317

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Simulation of nanometer-scale semiconduc
✍ Eiichi Sano πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 662 KB

It is necessary to take quantum effects into account in the design of nanometerscale high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). To achieve this, an effective potential method is applied to drift-diffusion (DD)-based simulations of the threshold-voltage