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InAs quantum dot field effect transistors

✍ Scribed by G. Yusa; H. Sakaki

Book ID
102618971
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
46 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, single-electron discharge processes can be controlled by a surface gate voltage (V g ) as well as single-electron storage processes. We demonstrate possible application to novel photo devices and quantum dot memory devices.

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