✦ LIBER ✦

Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer

✍ Scribed by C. Metzner; G. Yusa; H. Sakaki

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 200 KB
Volume: 25
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0228

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✦ Synopsis

By a computer simulation we study the real space and energy distributions of 0D electrons bound in a planar array of quantum dots, including both intra-dot charging and inter-dot Coulomb interaction effects, size fluctuations, as well as the screening by a parallel gas of 2D electrons.

It is demonstrated that the mutual Coulomb shifts between different dots cause pronounced many-body correlation effects and in-plane potential fluctuations, which can be significant for experiments such as capacitance and tunneling spectroscopy. In addition we investigate the influence of charged dot scattering on the mobility of a conducting channel parallel to the dot layer.

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