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InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

โœ Scribed by Nilsson, H.A.; Deng, M.T.; Caroff, P.; Thelander, C.; Samuelson, L.; Wernersson, L.-E.; Xu, H.Q.

Book ID
114571062
Publisher
IEEE
Year
2011
Tongue
English
Weight
830 KB
Volume
17
Category
Article
ISSN
1077-260X

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๐Ÿ“œ SIMILAR VOLUMES

InAs quantum dot field effect transistor
InAs quantum dot field effect transistors
โœ G. Yusa; H. Sakaki ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 46 KB

We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, singl