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Quantitative characterization of oxygen precipitates in CZ-silicon with secondary ion mass spectrometry

✍ Scribed by S. Gara; G. Stingeder; H. Hutter; H. Führer; M. Grasserbauer

Book ID
112291128
Publisher
Springer
Year
1991
Tongue
English
Weight
810 KB
Volume
341
Category
Article
ISSN
1618-2650

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Quantitative analysis of the native oxide on silicon wafers has been investigated by secondary ion mass spectrometry (SIMS) combined with an encapsulation method. In the encapsulation technique, the sample surface is covered with a thin Ðlm whose material is identical to that of the substrate of the