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Quantitative analysis of light emission from SiGe quantum wells

✍ Scribed by S. Fukatsu; H. Akiyama; Y. Shiraki; H. Sakaki


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
670 KB
Volume
157
Category
Article
ISSN
0022-0248

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The Ge concentration in MBE-grown SiGe quantum wells can be quantitatively and non-destructively analyzed by means of low energy Rutherford backscattering (RBS), even for a 10 nm thick quantum well at a depth of about 60 nm below the surface. From the raw data quantitative information can be deduced