A 200 nm Ti Γlm was deposited on a polished AlN ceramic substrate at 200 ΓC by electron beam evaporation and then annealed under high vacuum conditions. The MCs'-SIMS technique (detecting MCs' secondary ions under Cs' primary ion bombardment, where M is the element to be analysed), RBS and x-ray di
β¦ LIBER β¦
Quantitative analysis of buried interfacial impurity layers by SIMS and RBS
β Scribed by Peter Williams; Judith E. Baker; John A. Davies; Tom E. Jackman
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 358 KB
- Volume
- 191
- Category
- Article
- ISSN
- 0167-5087
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