Quantification of the In-distribution in embedded InGaAs quantum dots by transmission electron microscopy

✍ Scribed by H. Blank; D. Litvinov; R. Schneider; D. Gerthsen; T. Passow; K. Scheerschmidt

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 276 KB
• Volume: 44
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200900513

✦ Synopsis

Abstract

The In‐concentration in InGaAs quantum dots located within a GaAs matrix was determined with the composition evaluation by lattice fringe analysis (CELFA) technique. However, the results obtained with this method cannot account for the three‐dimensional shape of quantum dots and their embedding in GaAs. A correction procedure was developed that takes into consideration the shape of the quantum dots and the TEM sample thickness and quantum‐dot size. After correction, In‐concentration profiles show an increasing In‐content towards the top of the quantum dots which is consistent with the effect of In‐segregation and earlier studies using other experimental techniques. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)