Quantification of impurity concentration in Cu2O and CuO via secondary ion mass spectrometry

✍ Scribed by Andreas Laufer; Daniel Reppin; Hauke Metelmann; Sebastian Geburt; Carsten Ronning; Thomas Leichtweiss; Jürgen Janek; Bruno K. Meyer

• Book ID: 104542034
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 961 KB
• Volume: 249
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.201147407

✦ Synopsis

Abstract

Secondary ion mass spectrometry (SIMS) is a technically matured analysis technique for the investigation of depth and lateral distributions in solids. The “raw data” of a SIMS measurement provides only qualitative information. For quantification so‐called relative sensitivity factors (RSF) are mandatory. To our knowledge no RSFs have been determined for Cu~2~O and CuO so far. In this work the RSFs for 21 elements in Cu~2~O and 14 elements in CuO have been determined via ion implanted standards. For the RSF determination we present the plateau method (Section 3) for box‐like implantation profiles. This method provides a lower uncertainty in RSF value compared to the obtained uncertainty using single implantation profiles. In addition, we have estimated the electron affinities of NO~2~, AsO~2~ and SbO to 0.55, 2.7 and 2.85 eV, respectively. Unexpectedly, we observe for Cu~2~O and CuO nearly identical RSF values. This behaviour cannot be attributed to a change in chemical composition caused by the SIMS sputter process. Furthermore, the calculated RSFs have been used to determine the impurity concentrations of our sputtered copper oxide thin films.