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Purity of GaAs grown by LPE in a graphite boat

✍ Scribed by Hadis Morkoc; Lester F. Eastman

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
433 KB
Volume
36
Category
Article
ISSN
0022-0248

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A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn