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Pure and cobalt-doped SnO2(101) films grown by molecular beam epitaxy on Al2O3

✍ Scribed by Matthias Batzill; James M. Burst; Ulrike Diebold

Book ID
108287820
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
487 KB
Volume
484
Category
Article
ISSN
0040-6090

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Optical characterisation of Bi-doped GaN
Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy
✍ IbÑñez, J. ;Pastor, D. ;CuscΓ³, R. ;ArtΓΊs, L. ;Avella, M. ;JimΓ©nez, J. ;Novikov, πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 135 KB

## Abstract We use cathodoluminescence and Raman spectroscopy to investigate GaN layers grown by plasma‐assisted molecular beam epitaxy with different Bi fluxes. We find that the growth of GaN with an additional Bi flux favours the formation of submicron cubic domains, which results in layers with