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Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

✍ Scribed by M. Kobayashi; K. Morita; T. Suemasu

Book ID
108289640
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
367 KB
Volume
515
Category
Article
ISSN
0040-6090

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