Pulse plasma assisted atomic layer deposition of W-C-N thin films for Cu interconnects

✍ Scribed by Kim, Yong Tae ;Park, Ji Ho

• Book ID: 105363428
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 192 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521296

✦ Synopsis

Abstract

Abstract W–C–N films have been deposited on a tetraethylorthosilicate (TEOS) interlayer dielectric with atomic layer deposition (ALD) cycles of WF~6~–N~2~–CH~4~ gases and the exposure cycles of N~2~ and CH~4~ are synchronized with a pulse plasma. The W–C–N films on TEOS layer follow the ALD mechanism, keep a constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles, and have fairly low resistivity (300 µΩ cm). As a diffusion barrier for Cu interconnection the W–C–N films maintain the amorphous phase and no Cu interdiffusion occurs even at 800 °C for 30 min. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)