Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
β Scribed by Sang In Song; Jong Ho Lee; Bum Ho Choi; Hong Kee Lee; Dong Chan Shin; Jin Wook Lee
- Book ID
- 119374144
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 799 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0257-8972
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## Abstract Abstract WβCβN films have been deposited on a tetraethylorthosilicate (TEOS) interlayer dielectric with atomic layer deposition (ALD) cycles of WF~6~βN~2~βCH~4~ gases and the exposure cycles of N~2~ and CH~4~ are synchronized with a pulse plasma. The WβCβN films on TEOS layer follow the
Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conform