Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots
β Scribed by Franceschetti, Alberto; Zunger, Alex
- Book ID
- 115537118
- Publisher
- The American Physical Society
- Year
- 2000
- Tongue
- English
- Weight
- 349 KB
- Volume
- 62
- Category
- Article
- ISSN
- 1098-0121
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The electron-and hole-related electrical activity of the InAs/GaAs quantum dot system has been demonstrated with a use of the highresolution Laplace and conventional DLTS methods combined with below GaAs bandgap illumination. Without the illumination, the DLTS signal refers to the emission process o
Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 β’ C. The use of n-and p-type GaAs matrices allows u