A continuous-wave Pr:YAlO 3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO 3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at ∼ 448 nm was used as a pumping source. Output characterist
Pr:YAlO_3 microchip laser
✍ Scribed by Fibrich, Martin; Jelínková, Helena; Šulc, Jan; Nejezchleb, Karel; Škoda, Václav
- Book ID
- 115433528
- Publisher
- Optical Society of America
- Year
- 2010
- Tongue
- English
- Weight
- 267 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0146-9592
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
In the present work we report on two wavelength generation of Pr:YAlO3 laser reached by Lyot filter tuning at room temperature. Laser emission at two transitions in the visible part of the electromagnetic spectrum (747 nm and 720 nm) has been demonstrated employing the broadband laser resonator mirr
The praseodymium ion in solids exhibits emission from a number of levels located in different regions of the spectrum and presents various spectral features that include anti-Stokes emission, otherwise called upconversion. We have examined this phenomenon in two laser crystals YAlO 3 and Y 3 Al 5 O