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Pr:YAlO3 microchip laser at 662 nm

✍ Scribed by M. Fibrich; H. Jelínková; J. Šulc; K. Nejezchleb; V. Škoda

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
176 KB
Volume
8
Category
Article
ISSN
1612-2011

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✦ Synopsis

A continuous-wave Pr:YAlO 3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO 3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at ∼ 448 nm was used as a pumping source. Output characteristics were investigated at different active medium temperature within the range of 11 -35 • C. The best result 27.4 mW of output power has been reached at 11 • C at 680 mW of pumping power. The slope efficiency related to the incident pumping power was ∼ 9%.

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