Nd:YAG/V:YAG microchip laser operating at 1338 nm

✍ Scribed by J. Šulc; H. Jelínková; K. Nejezchleb; V. Škoda

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 257 KB
• Volume: 2
• Category: Article
• ISSN: 1612-2011
• DOI: 10.1002/lapl.200510045

✦ Synopsis

Q-switched microchip laser emitting radiation at
wavelength 1338 nm was designed and constructed. This laser was
based on a monolith crystal which combines in one piece a cooling
undoped part (undoped YAG crystal), an active laser part
(Nd^3+^:YAG), and a saturable absorber (V^3+^:YAG,
T
~0~=85%). The microchip resonator consists of dielectric
mirrors directly deposited on the monolith surfaces. The output
coupler with reflection 90% was placed on the V^3+^-doped
part. Q-switched microchip laser was tested under pulsed, and CW
diode pumping. The pulse length was the same for all regimes and
it equals to 6.2 ns. The wavelength of linearly polarized laser
emission was 1338 nm. For pulsed pumping the output pulse energy
was stable up to mean pump power 1 W and it was equal to
131 μJ, which corresponds to peak power 21 kW. In CW regime
for pumping up to 14 W the pulse energy was 37 μJ.