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Diode-pumped Pr3+:YAlO3/LBO violet laser at 374 nm

โœ Scribed by X. H. Fu; Y. L. Li; H. L. Jiang

Book ID
110208987
Publisher
Springer
Year
2011
Tongue
English
Weight
123 KB
Volume
21
Category
Article
ISSN
1054-660X

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Pr:YAlO3 microchip laser at 662 nm
Pr:YAlO3 microchip laser at 662 nm
โœ M. Fibrich; H. Jelรญnkovรก; J. ล ulc; K. Nejezchleb; V. ล koda ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 176 KB

A continuous-wave Pr:YAlO 3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO 3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at โˆผ 448 nm was used as a pumping source. Output characterist