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Properties of TiN films grown by atomic-layer chemical vapor deposition with a modified gaseous-pulse sequence

โœ Scribed by Hsyi-En Cheng; Wen-Jen Lee


Book ID
113781644
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
546 KB
Volume
97
Category
Article
ISSN
0254-0584

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๐Ÿ“œ SIMILAR VOLUMES


Electrical properties of N atomic layer
โœ Youngcheon Jeong; Masao Sakuraba; Junichi Murota ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t