Electrical properties of N atomic layer
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Youngcheon Jeong; Masao Sakuraba; Junichi Murota
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Article
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2005
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Elsevier Science
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English
โ 304 KB
Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t