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Properties of p-n heterojunction diode based on Ge[sub 2]Sb[sub 2]Te[sub 5] and its application for phase change random access memory

✍ Scribed by Tang, Li; Zhou, Peng; Wan, Haijun; Jin, Gang; Chen, B. A.; Tang, Ting-ao; Lin, Yinyin

Book ID: 120164546
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 517 KB
Volume: 105
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3055417

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