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Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) Devices

✍ Scribed by Ryu, S. O.; Yoon, S. M.; Choi, K. J.; Lee, N. Y.; Park, Y. S.; Lee, S. Y.; Yu, B. G.; Park, J. B.; Shin, W. C.

No coin nor oath required. For personal study only.

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