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Properties of MOS structures prepared on substrates having ion-implanted impurity distribution profile : Warabisako, Yoshida and Tokuyama. Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August (1972) Japan Soc. Appl. Phys. 42 (1973) Suppl., p. 181

Publisher: Elsevier Science
Year: 1973
Tongue: English
Weight: 71 KB
Volume: 12
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(73)90111-x

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