𝔖 Bobbio Scriptorium

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Low-energy implantation of boron in silicon : Yoshihiro and Tokuyama. Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August (1972). Japan Soc. Appl. Phys. 42 (1973) Suppl., p. 113

Publisher: Elsevier Science
Year: 1973
Tongue: English
Weight: 71 KB
Volume: 12
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(73)90107-8

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📜 SIMILAR VOLUMES

Properties of MOS structures prepared on

Properties of MOS structures prepared on substrates having ion-implanted impurity distribution profile : Warabisako, Yoshida and Tokuyama. Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August (1972) Japan Soc. Appl. Phys. 42 (1973) Suppl., p. 181

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An improvement on structure of charge co

An improvement on structure of charge coupled devices : Mifune, Ochi, Kano and Shibata. Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August (1972) Japan Soc. Appl. Phys. 42 (1973) Suppl., p. 207

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Nonvolatile optical pattern memory using

Nonvolatile optical pattern memory using MAOS structure : Tarui, Komiya and Sakamoto. Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August (1972), Japan Soc. Appl. Phys. 42 (1973), Suppl., p. 145

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Device design of E/D gate MOSFET : Masud

Device design of E/D gate MOSFET : Masuda, Masuhara, Nagata and Hashimoto. Proceedings 4th Conference on Solid State Devices, Tokyo. 30–31 August (1972), Japan Soc. Appl. Phys. 42 (1973), p. 167

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Study on three-dimensional distribution

Study on three-dimensional distribution of implanted ions by He+ backscattering technique : Ishiwara, Furukawa, Matsumura and Natsuaki. Proceedings 4th Conference on Solid State Devices, Tokyo. 30–31 August (1972). Japan Soc. Appl. Phys. 42 (1973) Suppl., p. 124

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Observation of lattices defects in ion-i

Observation of lattices defects in ion-implanted Si wafer by a double crystal spectrometer method : Kishino and Noda. Proceedings 4th Conference on Solid State Devices, Tokyo, 30–31 August, 1972. Japan Soc. Appl. Phys. 42 (1973) Suppl., p. 118

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