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Properties of monolithic InGaN quantum dot pillar microcavities

✍ Scribed by Sebald, K. ;Seyfried, M. ;Kalden, J. ;Dartsch, H. ;Tessarek, C. ;Aschenbrenner, T. ;Figge, S. ;Kruse, C. ;Hommel, D. ;Florian, M. ;Jahnke, F. ;Gutowski, J.

Book ID
105366036
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
221 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

InGaN quantum dots were successfully implemented into fully epitaxially grown nitride‐based monolithic microcavities (MCs). The discrete modes of airpost pillar MCs prepared out of the planar sample are shown in microreflectivity as well as in microphotoluminescence. These measurements are compared to theoretical simulations based on a vectorial‐transfer matrix method. Quality factors of up to 280 have been achieved and the emission of a single quantum dot was traced up to a temperature of 125 K.

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