Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity
✍ Scribed by Heiko Dartsch; Christian Tessarek; Timo Aschenbrenner; Stephan Figge; Carsten Kruse; Marco Schowalter; Andreas Rosenauer; Detlef Hommel
- Book ID
- 104022264
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 809 KB
- Volume
- 320
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
We present for the first time electroluminescence from InGaN quantum dots inside a monolithic nitride based cavity. The structure consists of a 40-fold bottom GaN/Al 0.82 In 0.18 N distributed Bragg reflector (DBR), a single InGaN quantum dot layer inside a 5l n-type (bottom) and p-type (top) doped GaN cavity and a 10-fold GaN/Al 0.82 In 0.18 N top DBR. Structural properties have been investigated by scanning transmission electron microscopy. Optical reflectivity measurements are in good agreement with calculations which predict a peak reflectivity of 92% and a quality factor of 220. Electroluminescence shows a pronounced emission at the spectral position of the cavity mode near 500 nm.