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Properties of Liquid Phase Epitaxial GaAs Grown from Tin Solution

✍ Scribed by Neumann, H. ;Jacobs, K. ;Reppin, R. ;Butter, E. ;Sobotta, H. ;Staudte, M.


Book ID
105371169
Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
402 KB
Volume
32
Category
Article
ISSN
0031-8965

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Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was