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Incorporation of Sn into epitaxial GaAs grown from the liquid phase

✍ Scribed by E. Kuphal; A. Schlachetzki; A. Pöcker

Book ID
104992448
Publisher
Springer
Year
1978
Tongue
English
Weight
853 KB
Volume
17
Category
Article
ISSN
1432-0630

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Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was