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Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition

✍ Scribed by Grudowski, P. A.; Eiting, C. J.; Park, J.; Shelton, B. S.; Lambert, D. J. H.; Dupuis, R. D.

Book ID: 120374632
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 373 KB
Volume: 71
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.119959

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