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Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor deposition

โœ Scribed by Grudowski, Paul A; Eiting, Christopher J; Dupuis, Russell D


Book ID
108342683
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
157 KB
Volume
189-190
Category
Article
ISSN
0022-0248

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Phase separation in Zn-doped InGaN grown
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Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. H