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Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition

✍ Scribed by Z. C. Feng; W. Liu; S. J. Chua; J. H. Chen; C. C. Yang; W. Lu; W. E. Collins

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
122 KB
Volume
2
Category
Article
ISSN
1862-6351

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