𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Properties of high-efficiency zinc-diffused Ga1-xAlxAs light-emitting diodes

✍ Scribed by E. G. Dierschke

Book ID
112817413
Publisher
Springer US
Year
1972
Tongue
English
Weight
461 KB
Volume
1
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Ga1-xAlxAs - red light emitting diodes w
Ga1-xAlxAs - red light emitting diodes with high Si doping
✍ Doz. Dr. A. Zehe; Dr. G. KΓΌhn; Dr. P. Fischer; Dipl.-Phys. E. Koch; Dipl. Phys. πŸ“‚ Article πŸ“… 1973 πŸ› John Wiley and Sons 🌐 English βš– 133 KB

Gal-#lxAs -Red Light Emitting Diodes with High Si Doping Because of the amphoteric nature Si in Gay-xA&As forms a slightly bound donor and a deep acceptor level which is responsible for an emission band under UV excitation (BINDEAIlA"; FISCHER) near 1,80 eV at 77 K, explained a s a phonon replica of