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Ga1-xAlxAs - red light emitting diodes with high Si doping

✍ Scribed by Doz. Dr. A. Zehe; Dr. G. Kühn; Dr. P. Fischer; Dipl.-Phys. E. Koch; Dipl. Phys. R. Doss

Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
133 KB
Volume
8
Category
Article
ISSN
0232-1300

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✦ Synopsis

Gal-#lxAs -Red Light Emitting Diodes with High Si Doping Because of the amphoteric nature Si in Gay-xA&As forms a slightly bound donor and a deep acceptor level which is responsible for an emission band under UV excitation (BINDEAIlA"; FISCHER) near 1,80 eV at 77 K, explained a s a phonon replica of an 81-81 pair recombination. This conclusion has been drawn from the

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