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Frequency response of Ga1-xAlxAs light-emitting diodes

✍ Scribed by Namizaki, H.; Nagano, M.; Nakahara, S.


Book ID
114591727
Publisher
IEEE
Year
1974
Tongue
English
Weight
448 KB
Volume
21
Category
Article
ISSN
0018-9383

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Gal-#lxAs -Red Light Emitting Diodes with High Si Doping Because of the amphoteric nature Si in Gay-xA&As forms a slightly bound donor and a deep acceptor level which is responsible for an emission band under UV excitation (BINDEAIlA"; FISCHER) near 1,80 eV at 77 K, explained a s a phonon replica of