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Properties of copper donor levels in silicon

โœ Scribed by Lemke, H.


Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
214 KB
Volume
1
Category
Article
ISSN
0031-8965

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Impurity profiling using C-V measurements has shown that following the epitaxial regrowth of implanted silicon at 600ยฐC or 700oc a high concentration of excess donors was located near the edge of the region which had been amorphous. These results have been obtained from layers made amorphous by impl