## Abstract InAs coβdoped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using Xβray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to invest
Properties of Co-doped ZnO films prepared by electrochemical deposition
β Scribed by Y. X. Wang; X. Ding; Y. Cheng; Y. J. Zhang; L. L. Yang; H. L. Liu; H. G. Fan; Y. Liu; J. H. Yang
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 186 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
We prepared Coβdoped ZnO films by the electrochemical deposition. Xβray diffraction (XRD), high resolution transmission microscopy (HRTEM), xβray photoelectron spectroscopy (XPS), atomic force microscope (AFM), xβray absorption nearβedge structure (XANES), vibrating sample magnetometer (VSM), optical absorption, and photoluminescence (PL) measurements were carried out on the samples. The results showed Co atoms substituted Zn atoms in the ZnO lattice without the formation of the impurity phase. VSM measurements showed the ferromagnetic properties for the Coβdoped ZnO samples. When the Co doping concentration increased, the band gaps were widened and the PL peak positions shifted towards the short wavelength direction. (Β© 2009 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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