Properties of amorphous–crystalline silicon junctions
✍ Scribed by Busmundrud, O.
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 434 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0031-8965
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📜 SIMILAR VOLUMES
The aim of the paper is to review certain aspects of the electronic structure and properties of metal-a-semiconductor barriers which are of relevance to the theme of this Conference. The discussion will be confined to amorphous silicon (a-%) prepared by the plasma decomposition of silane, which is o
## Abstract To study recombination at the amorphous/crystalline Si (a‐Si:H/c‐Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan