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Profiling of the p–n Junction in Silicon by the Electrochemical Capacitance–Voltage Technique

✍ Scribed by Kinder, R.

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
120 KB
Volume
169
Category
Article
ISSN
0031-8965

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The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.7970.04 and 1.1370.06 eV for this structure have been obtained fr